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| BFP 180W NPN Silicon RF Transistor For low-power amplifier in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 3 4 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 180W Maximum Ratings Parameter Marking RDs 1=E Pin Configuration 2=C 3=E 4=B Package SOT-343 Unit V Symbol VCEO VCES VCBO VEBO IC IB 126C 1) Ptot Tj TA Tstg Value 8 10 10 2 4 0.5 30 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS mA mW C 785 K/W 1 Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable F) IC = 1 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 1 mA, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 9 7 |S21e|2 15 11.5 Gms 2.1 2.25 F Ceb 0.1 Cce 0.27 Ccb 0.22 0.35 fT 5 7 typ. max. Unit GHz pF dB 3 Oct-12-1999 BFP 180W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.18519 26.867 1.9818 3.2134 1.6195 60 3.2473 14.866 1.0202 1.1812 2.2648 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 94.687 0.025252 20.325 0.012138 1.4255 3.7045 1.1812 0.3062 0 0.30423 0 0 0.87906 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0236 130.93 0.93013 6.1852 0.01 0.56 0.41827 0.22023 183.69 0.08334 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.43 0.47 0.26 0.12 0.06 68 46 232 nH nH nH nH nH nH fF fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Oct-12-1999 BFP 180W Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 35 mW TS 25 P tot TA 20 15 10 5 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 1 Ptotmax / PtotDC K/W - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Oct-12-1999 BFP 180W Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.5 10 GHz 10V 8V 5V pF 8 7 Ccb 0.3 fT 6 5 3V 0.2 4 3 2V 1V 0.7V 0.1 2 1 0.0 0 2 4 6 8 V 12 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 dB 10V 2V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 dB 10V 5V 16 14 14 12 G 12 10 8 6 4 2 G 1V 0.7V 3V 2V 10 8 6 4 2 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 IC IC 6 Oct-12-1999 BFP 180W Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 18 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz 8 dBm 8V 5V IC=1mA 0.9GHz 4 2 3V 2V 14 IP 3 12 1.8GHz 0 -2 -4 -6 1V G 10 8 6 4 2 0 0 0.9GHz 1.8GHz -8 -10 -12 -14 -16 2 4 6 8 V 12 -18 0.0 1.0 2.0 3.0 4.0 mA 6.0 VCE IC Power Gain Gma , Gms = f(f) VCE = Parameter 28 dB Power Gain |S21|2= f(f) V CE = Parameter 12 IC=1mA dB IC =1mA 24 22 20 G 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 10V 1V 0.7V G 6 10V 2V 1V 0.7V 18 8 4 2 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f f 7 Oct-12-1999 |
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